Epitaxial Pb on InAs nanowires for quantum devices

Quantum interference effects in InAs semiconductor nanowires

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Quantum Hall devices on epitaxial graphene: towards large-scale integration

Quantum Hall devices have been used as the primary standard of electrical resistance for over two decades, and they are unlikely to be replaced in this role any time soon. The work presented in this thesis was being done towards the goal of establishing epitaxial graphene on silicon carbide as a new material of choice for these devices. Experiments on individual devices have already demonstrate...

Mini array of quantum Hall devices based on epitaxial graphene

Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at filling factor ν = 2 starting from relatively low magnetic field (between 4 T and 5 T) when temperature was 1.5 K. Precision measurements of quantized Hall resis...

Tunable few electron quantum dots in InAs nanowires

Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using th...

FEW ELECTRON QUANTUM DOTS IN InAs/InP CORE SHELL NANOWIRES